aotf160a60l/AOT160A60L/aob160a60l 600v, a mos5 tm n-channel power transistor general description product summary v ds @ t j,max 700v i dm 96a r ds(on),max < 0.16 q g,typ 46nc e oss @ 400v 4.9 m j applications 100% uis tested 100% r g tested form tube tube tape &reel symbol aot(b)160a60l v ds v gs 24 15 i dm i ar e ar e as 250 2.0 t j , t stg t l symbol aot(b)160a60l r q ja 65 r q cs 0.5 r q jc 0.5 * drain current limited by maximum junction temperature. c/w -- 24* 15* aotf160a60l to-220f green 1000 aotf160a60l 34.7 mj w i d a 6 96 gate-source voltage aotf160a60l w/c mj v/ns 0.3 c 20 100 18 pulsed drain current c a t c =25c t c =100c continuous drain current avalanche current c derate above 25c p d maximum case-to-sink a single pulsed avalanche energy g mosfet dv/dt ruggedness dv/dt v orderable part number ? proprietary mos5 tm technology ? low r ds(on) ? optimized switching parameters for better emi performance ? enhanced body diode for robustness and fast reverse recovery ? smps with pfc, flyback and llc topologies ? micro inverter with dc/ac inverter topology absolute maximum ratings t a =25c unless otherwise noted AOT160A60L package type to-220 green minimum order quantity 1000 units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds thermal characteristics parameter 300 c 20 v units 600 aob160a60l to-263 green 800 c/w c/w maximum junction-to-ambient a,d maximum junction-to-case parameter drain-source voltage 65 3.6 repetitive avalanche energy c peak diode recovery dv/dt 172 t c =25c power dissipation b g d s g d s to - 220 AOT160A60L g d s to - 220f aotf160a60l to - 263 d 2 pak d s g aob160a60l rev.1.0: april 2019 www.aosmd.com page 1 of 6 downloaded from: http:///
aotf160a60l/AOT160A60L/aob160a60l symbol min typ max units 600 700 bv dss /?tj 0.53 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3 v r ds(on) 0.14 0.16 g fs 20 s v sd 0.87 1.2 v i s 24 a i sm 96 a c iss 2340 pf c oss 62 pf c o(er) 56 pf c o(tr) 233 pf c rss 1.3 pf r g 5.4 q g 46 nc q gs 17 nc q gd 14 nc t d(on) 34 ns t r 29 ns t d(off) 63 ns t f 19 ns t rr 387 ns i rm 30 a q rr 7.3 m c applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. m a v ds =480v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =20v gate-body leakage current v gs =10v, v ds =480v, i d =12a total gate charge gate source charge gate drain charge switching parameters i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =600v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz static drain-source on-resistance bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =12a,v gs =0v v ds =10v, i d =12a v gs =10v, i d =12a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters v gs =10v, v ds =400v, i d =12a, r g =5 w turn-on rise time turn-on delaytime peak reverse recovery current i f =12a, di/dt=100a/ m s, v ds =400v body diode reverse recovery charge body diode reverse recovery time turn-off delaytime turn-off fall time a. the value of r q ja is measured with the device in a still air environment with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction- to -case thermal resistance, and is more useful in setting t he upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction tempera ture t j(max) =150 c, ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -case thermal impedance which is measured with the device mounted to a large heatsink , assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =2.4a, r g =25 ?, starting t j =25 c. h. c o(er) is a fixed capacitance that gives the same stored ener gy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. rev.1.0: april 2019 www.aosmd.com page 2 of 6 downloaded from: http:///
aotf160a60l/AOT160A60L/aob160a60l typical electrical and thermal characteristics 0.1 0.12 0.14 0.16 0.18 0.2 0 5 10 15 20 25 30 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1e - 04 1e - 03 1e - 02 1e - 01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0 0.5 1 1.5 2 2.5 3 - 100 - 50 0 50 100 150 200 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature v gs =10v i d =12a v gs =10v 0 10 20 30 40 50 0 4 8 12 16 20 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5v 6v 6.5v 10v 8v 0.7 0.8 0.9 1 1.1 1.2 1.3 - 100 - 50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5: break down vs. junction temparature 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =10v 25 c 125 c 5.5v rev.1.0: april 2019 www.aosmd.com page 3 of 6 downloaded from: http:///
aotf160a60l/AOT160A60L/aob160a60l typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1 10 100 1000 10000 0 100 200 300 400 500 600 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =480v i d =12a 0 5 10 15 20 25 30 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 10: current de-rating (note f) 0.01 0.1 1 10 100 1000 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for aotf160a60l (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 2 4 6 8 10 0 100 200 300 400 500 600 eoss (uj) v ds (volts) figure 9: coss stored energy e oss 0.01 0.1 1 10 100 1000 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for aot(b)160a60l (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s rev.1.0: april 2019 www.aosmd.com page 4 of 6 downloaded from: http:///
aotf160a60l/AOT160A60L/aob160a60l typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal impedance for aotf160a60l (not e f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm 0.001 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal impedance for aot(b)160a60l (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.1.0: april 2019 www.aosmd.com page 5 of 6 downloaded from: http:///
aotf160a60l/AOT160A60L/aob160a60l - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.0: april 2019 www.aosmd.com page 6 of 6 downloaded from: http:///
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